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Doping Concentration

The intentional introduction of impurities (dopants) to modify the electrical conductivity. It controls the majority carrier concentration (NDN_D or NAN_A).
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The statement of the theorem

The majority carrier concentration (nn or pp) in a doped semiconductor is approximated by the concentration of the intentionally introduced dopant impurities (NDN_D or NAN_A), assuming full ionization and charge neutrality: n×approx→ND (for n-type) or p×approx→NA (for p-type)n \times \text{approx} \to N_D \text{ (for n-type)} \text{ or } p \times \text{approx} \to N_A \text{ (for p-type)}.