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PN Junction Diode Behavior

Describes the current-voltage relationship across a junction formed by P-type and N-type semiconductors. The current density JJ is governed by the Shockley diode equation: J=Js(eqV/nkT−1)J = J_s (e^{qV/nkT} - 1).
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The statement of the theorem

Define the current density JJ across a PN junction as a function of applied voltage VV: J(V)=Js(eqV/nkT−1)J(V) = J_s \big(e^{qV/nkT} - 1\big), where JsJ_s is the reverse saturation current density, qq is the elementary charge, nn is the ideality factor, kk is the Boltzmann constant, and TT is the absolute temperature.