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Gummel-Newton Model

An advanced, highly accurate model for semiconductor junctions, providing a detailed description of current transport by solving continuity equations for minority and majority carriers.
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The statement of the theorem

The Gummel-Newton model provides a detailed description of carrier transport by solving the continuity equations for minority and majority carriers (Δp\Delta p and Δn\Delta n) within the semiconductor depletion region. The current density JJ is derived from the total carrier flux, which includes diffusion and drift components:\nJ=q(μpdpdx+μndndx+pμpE+nμnE)J = q \left( \mu_p \frac{d p}{d x} + \mu_n \frac{d n}{d x} + p \mu_p E + n \mu_n E \right)\nWhere μp\mu_p and μn\mu_n are the mobilities, and EE is the electric field. The model solves these equations coupled with Poisson's equation.