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MOS Capacitor Capacitance

The capacitance (

C

) of a Metal-Oxide-Semiconductor (MOS) structure is given by

C = \frac{\text{Area} \times \text{Permittivity}}{\text{Thickness}}

, where

\text{Permittivity} = \text{Permittivity}_0 \times \text{Relative Permittivity}

📜

The statement of the theorem

The capacitance

C

of a Metal-Oxide-Semiconductor (MOS) structure is defined by the geometric and material parameters: C = \frac{A \times \text{\epsilon}}{\text{Thickness}} where

A

is the physical area,

\text{Thickness}

is the oxide thickness, and the permittivity \text{\epsilon} is given by \text{\epsilon} = \text{\epsilon}_0 \times \text{\epsilon}_r, with \text{\epsilon}_0 being the permittivity of free space and \text{\epsilon}_r being the relative permittivity.

Source: Wikipedia