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MOSFET Transconductance Parameter ($\mu_n W/L$)

Represents the effective mobility and geometry of the MOSFET, crucial for calculating the maximum current gain. It is defined as

\mu_n W/L = \mu_n (W/L)

, where

\mu_n

is electron mobility.

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The statement of the theorem

Define the effective transconductance parameter

K_{eff}

for a MOSFET as:\n

K_{eff} = \mu_n \frac{W}{L} \left( \frac{W}{L} \right)

\nWhere

\mu_n

is the electron mobility in the silicon substrate,

W

is the channel width, and

L

is the channel length. The parameter

K_{eff}

governs the maximum achievable transconductance

g_m

in the saturation regime, defined by:\n

g_m \approx K_{eff} (V_{GS} - V_{th})

Source: Wikipedia